开关元件

VS-ST180S20P0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

TISP61089PS

TISP61089PS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:11 A
Repetitive Peak Forward Blocking Voltage:100 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

MOC256M

MOC256M

电气特性 Features

  • 光电晶体管输出光电耦合器,AC交流传感输入
  • 8-Pin SOIC AC Input Phototransistor Output Optocoupler
  • Phototransistor Output - AC Sensing Input
光电耦合器(光耦) 更新于 2025-09-17 Tag标签:光电耦合器(光耦)

VS-VSKH91/08

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:250 mA
Rated Average On-State Current:95 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.73 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-ST183S08PFL1P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:195 A
Surge Current Rating:5130 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.8@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-181RKI80PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:180 A
Surge Current Rating:4000 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.35@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-ST103S08PFL1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:105 A
Surge Current Rating:3150 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.73@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

TPDV1225RG

电气特性 Features

Type:Alternistor
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:50(Typ) mA
Surge Current Rating:390 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.8@35A V
Repetitive Peak Off-State Current:0.02 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:150 mA
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

TISP5080H3BJR-S

TISP5080H3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:65 V
Maximum Holding Current:600 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:65 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-VSKH162/12PBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:160 A
Surge Current Rating:5100 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.54 V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

FOD050L

FOD050L

电气特性 Features

  • 1Mbit/s单通道3.3V,高速晶体管输出光电耦合器
  • SO-8 1 Mbit/s Single-Channel High Speed Transistor Output Optocoupler 3.3V
  • Low Voltage, High Performance
光电耦合器(光耦) 更新于 2025-09-17 Tag标签:光电耦合器(光耦)

VS-2N686

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:250 V
Maximum Holding Current:20 mA
Rated Average On-State Current:16 A
Surge Current Rating:180 A
Repetitive Peak Forward Blocking Voltage:250 V
Peak On-State Voltage:2@16A V
Repetitive Peak Off-State Current:6 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-ST180C04C1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-ST230S04P0V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:230 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.55@720A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)

VS-ST110S12P1VPBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2025-09-17 Tag标签:可控硅(晶闸管)