开关元件

TISP61089PS

TISP61089PS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:11 A
Repetitive Peak Forward Blocking Voltage:100 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TISP4380F3DS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:270 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4 A
Repetitive Peak Forward Blocking Voltage:270 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-ST083S08PFN1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TISP61089ADR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:11 A
Repetitive Peak Forward Blocking Voltage:120 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 85 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TISP7320F3DR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:240 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4.3 A
Repetitive Peak Forward Blocking Voltage:240 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TISP4320L3AJR-S

TISP4320L3AJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:240 V
Maximum Holding Current:600 mA
Surge Current Rating:18 A
Repetitive Peak Forward Blocking Voltage:240 V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TISP7150F3DR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4.3 A
Repetitive Peak Forward Blocking Voltage:120 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

MOCD207M

MOCD207M

电气特性 Features

  • 双通道光电晶体管输出光电耦合器,DC直流输入
  • 8-Pin SOIC Dual Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-05-01 Tag标签:光电耦合器(光耦)

VS-VSKH56/04

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:60 A
Surge Current Rating:1520 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.54 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-110RKI80PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-ST333C04LFM1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:620 A
Surge Current Rating:11500 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.96@1810A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-ST330S12P1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:330 A
Surge Current Rating:9420 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.52@1000A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

FOD3184

电气特性 Features

  • 3A输出电流,高速MOSFET/IGBT栅极驱动光电耦合器
  • 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler
  • IGBT/MOSFET Gate Drivers
光电耦合器(光耦) 更新于 2026-05-01 Tag标签:光电耦合器(光耦)

TYN16-600CT,127

TYN16-600CT,127

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:40 mA
Rated Average On-State Current:10.2 A
Surge Current Rating:198 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@32A V
Repetitive Peak Off-State Current:1 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-T90RIA20

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:90 A
Surge Current Rating:1870 A
Repetitive Peak Forward Blocking Voltage:200 V
Peak On-State Voltage:1.55 V
Repetitive Peak Off-State Current:0.1 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)