开关元件

TN1205H-6T

TN1205H-6T

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:20 mA
Rated Average On-State Current:7.6 A
Surge Current Rating:126 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST380C06C0L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:960 A
Surge Current Rating:15700 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@3000A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

FOD3182

电气特性 Features

  • 3A输出电流,高速MOSFET栅极驱动光电耦合器
  • 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
  • IGBT/MOSFET Gate Drivers
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

TN2540-800G-TR

TN2540-800G-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:50 mA
Rated Average On-State Current:16 A
Surge Current Rating:314 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@50A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP4P025L1NR-S

TISP4P025L1NR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:16 V
Maximum Holding Current:30(Typ) mA
Repetitive Peak Forward Blocking Voltage:16 V
Repetitive Peak Off-State Current:0.001 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-2N682

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:50 V
Maximum Holding Current:20 mA
Rated Average On-State Current:16 A
Surge Current Rating:180 A
Repetitive Peak Forward Blocking Voltage:50 V
Peak On-State Voltage:2@16A V
Repetitive Peak Off-State Current:6.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST180C16C1L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TT61N12KOFB2

电气特性 Features

Type:PCT Module
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:76 A
Surge Current Rating:1550 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.9@300A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:1.4 V
Maximum Gate Trigger Current:120 mA
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

MOCD217M

MOCD217M

电气特性 Features

  • 双通道低输入电流光电晶体管输出光电耦合器
  • 8-Pin SOIC Dual Channel Low Input Current Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

VS-T70RIA120

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:70 A
Surge Current Rating:1740 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.55 V
Repetitive Peak Off-State Current:0.1 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP4C250H3BJR-S

TISP4C250H3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:190 V
Maximum Holding Current:600 mA
Surge Current Rating:30 A
Repetitive Peak Forward Blocking Voltage:190 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-VSKH105/08

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:250 mA
Rated Average On-State Current:105 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.8 V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 130 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TN1515-600B-TR

TN1515-600B-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:40 mA
Rated Average On-State Current:9.5 A
Surge Current Rating:165 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@30A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST180C12C0L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP9110LDMR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:9 A
Repetitive Peak Forward Blocking Voltage:120 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)