开关元件

TS1220-600B

TS1220-600B

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:5 mA
Rated Average On-State Current:8 A
Surge Current Rating:115 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.2 mA
Maximum Gate Peak Inverse Voltage:8(Min) V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-80RIA80

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:200 mA
Rated Average On-State Current:80 A
Surge Current Rating:1990 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@250A V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-VSKH26/10

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:200 mA
Rated Average On-State Current:27 A
Surge Current Rating:420 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.65 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP4350T3BJR-S

TISP4350T3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:275 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:30 A
Repetitive Peak Forward Blocking Voltage:275 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

MOC216M

MOC216M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

FODM124

电气特性 Features

  • DC(直流)检测输入,光电晶体管输出的光电耦合器
  • 4-pin Full Pitch MFP Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

FOD8321

电气特性 Features

  • 2.5A输出电流的门驱动光电耦合器
  • 2.5A Output Current, Gate Drive Optocoupler in Optoplanar® Wide Body SOP 5-Pin
  • IGBT/MOSFET Gate Drivers
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

MOC3012M

电气特性 Features

  • 250V随机相位可控硅驱动器输出光电耦合器
  • 6-Pin DIP 250V Random Phase Triac Driver Output Optocoupler
  • Random Phase TRIAC Driver
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

VS-ST730C12L1L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:990 A
Surge Current Rating:18700 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.62@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST303C12LFK1L

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:515 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-VSKH162/16PBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1600 V
Rated Average On-State Current:160 A
Peak On-State Voltage:1.54 V
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST203C10CFJ1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:370 A
Surge Current Rating:5510 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.72@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-16TTS12STRLPBF

VS-16TTS12STRLPBF

电气特性 Features

Repetitive Peak Reverse Voltage:1200 V
Rated Average On-State Current:10 A
Surge Current Rating:200 A
Repetitive Peak Forward Blocking Voltage:1200 V
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TN1215-1000G-TR

TN1215-1000G-TR

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP7082F3PS

TISP7082F3PS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:66 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:5.7 A
Repetitive Peak Forward Blocking Voltage:66 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)