开关元件

VS-ST303C08LFN1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:515 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-ST110S04P1V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-111RKI40PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:2180 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.57@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:120 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 140 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

MOC212M

MOC212M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-15 Tag标签:光电耦合器(光耦)

VS-113MT160KPBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:200 mA
Rated Average On-State Current:110 A
Surge Current Rating:1180 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.57@150A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-ST180S04P1V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

TPA0234G

电气特性 Features

  • 可控硅整流器
  • SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-VSKH136/14PBF

电气特性 Features

  • 可控硅整流器
  • Thyristor SCR Module 1.4KV 3.36KA
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-VSKH41/04

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:45 A
Surge Current Rating:985 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.81 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

TISP4350T3BJR-S

TISP4350T3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:275 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:30 A
Repetitive Peak Forward Blocking Voltage:275 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-40TPS08APBF

VS-40TPS08APBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:150 mA
Rated Average On-State Current:35 A
Surge Current Rating:600 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.85@110A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

VS-ST110S04P0V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

TYN612MRG

TYN612MRG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:20 mA
Rated Average On-State Current:8 A
Surge Current Rating:125 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

TISP61089BDR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:170 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:6.5 A
Repetitive Peak Forward Blocking Voltage:170 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 85 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-15 Tag标签:可控硅(晶闸管)

FODM8801C

电气特性 Features

  • DC(直流)检测输入,高温光电晶体管输出光耦
  • OptoHiT? Series, High-Temperature Phototransistor
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-15 Tag标签:光电耦合器(光耦)