开关元件

TYN1012TRG

TYN1012TRG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:15 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:5 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-VSKH71/10

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:250 mA
Rated Average On-State Current:75 A
Surge Current Rating:1940 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.59 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-ST303C12LFK1L

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:515 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

MOC8204M

电气特性 Features

  • 高压光电晶体管输出光电耦合器,DC直流输入
  • 6-pin DIP High Voltage Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-07-26 Tag标签:光电耦合器(光耦)

VS-ST180S08P0V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-ST083S08PFN0P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:85 A
Surge Current Rating:2560 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.15@300A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-25RIA20

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:200 V
Maximum Holding Current:130 mA
Rated Average On-State Current:25 A
Surge Current Rating:440 A
Repetitive Peak Forward Blocking Voltage:200 V
Peak On-State Voltage:1.7@79A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-ST180C16C1L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:350 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.96@750A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-ST230C14C0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:600 mA
Rated Average On-State Current:410 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.69@880A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-ST230C12C0L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:410 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.69@880A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

TISP4C035L1NR-S

TISP4C035L1NR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:24 V
Maximum Holding Current:50(Typ) mA
Repetitive Peak Forward Blocking Voltage:24 V
Repetitive Peak Off-State Current:0.001 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

FOD053L

FOD053L

电气特性 Features

  • 1Mbit/s,3.3V,1kV/us,双通道高速晶体管输出光电耦合器
  • SO8, 1MBIT/S High Speed Dual Channel Transistor- 1kV/us 3.3V
  • Low Voltage, High Performance
光电耦合器(光耦) 更新于 2026-07-26 Tag标签:光电耦合器(光耦)

VS-ST300C12C1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:650 A
Surge Current Rating:8380 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.18@1635A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-16TTS08PBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:100 mA
Rated Average On-State Current:10 A
Surge Current Rating:200 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.4@10A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)

VS-VSKH136/16PBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:200 mA
Rated Average On-State Current:135 A
Surge Current Rating:3360 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.57 V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-07-26 Tag标签:可控硅(晶闸管)