开关元件

MOC3012M

电气特性 Features

  • 250V随机相位可控硅驱动器输出光电耦合器
  • 6-Pin DIP 250V Random Phase Triac Driver Output Optocoupler
  • Random Phase TRIAC Driver
光电耦合器(光耦) 更新于 2026-05-01 Tag标签:光电耦合器(光耦)

VS-ST110S12P1V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-81RIA120

电气特性 Features

  • 可控硅整流器
  • Thyristor PCT 1.2KV 1.99KA
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-ST230S08P1VPBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:230 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.55@720A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-ST303C08CFN1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:620 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-ST700C16L1

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:910 A
Surge Current Rating:16400 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.8@2000A V
Repetitive Peak Off-State Current:80 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TS1220-600B

TS1220-600B

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:5 mA
Rated Average On-State Current:8 A
Surge Current Rating:115 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:0.8 V
Maximum Gate Trigger Current:0.2 mA
Maximum Gate Peak Inverse Voltage:8(Min) V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-25TTS12SPBF

VS-25TTS12SPBF

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:100 mA
Rated Average On-State Current:16 A
Surge Current Rating:350 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.25@16A V
Repetitive Peak Off-State Current:0.5 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:45 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-10RIA60

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:600 V
Maximum Holding Current:130 mA
Rated Average On-State Current:10 A
Surge Current Rating:240 A
Repetitive Peak Forward Blocking Voltage:600 V
Peak On-State Voltage:1.75@32A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

FOD814A

电气特性 Features

  • 光电晶体管输出光电耦合器
  • 4-Pin DIP Phototransistor Output Optocoupler
  • Phototransistor Output - AC Sensing Input
光电耦合器(光耦) 更新于 2026-05-01 Tag标签:光电耦合器(光耦)

FOD8318

FOD8318

电气特性 Features

  • 2.5 A输出电流,IGBT驱动的光电耦合器.带有有源米勒钳位,去饱和检测和隔离故障检测
  • 2.5 A Output Current, IGBT Drive Optocoupler With Active Miller Clamp, Desaturation Detection and Isolated Fault Sensing
  • IGBT/MOSFET Gate Drivers
光电耦合器(光耦) 更新于 2026-05-01 Tag标签:光电耦合器(光耦)

VS-ST110S16P0PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:110 A
Surge Current Rating:2830 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.52@350A V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-2N685

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:200 V
Maximum Holding Current:20 mA
Rated Average On-State Current:16 A
Surge Current Rating:180 A
Repetitive Peak Forward Blocking Voltage:200 V
Peak On-State Voltage:2@16A V
Repetitive Peak Off-State Current:6 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

TISP9110LDMR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:9 A
Repetitive Peak Forward Blocking Voltage:120 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)

VS-VSKH71/10

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:250 mA
Rated Average On-State Current:75 A
Surge Current Rating:1940 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.59 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-05-01 Tag标签:可控硅(晶闸管)