开关元件

MOC217M

MOC217M

电气特性 Features

  • 单通道光电晶体管输出光电耦合器,DC直流输入
  • 8-pin SOIC Single-Channel Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-20 Tag标签:光电耦合器(光耦)

VS-ST303C08LFN1

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:515 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

VS-VSKH136/04PBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:135 A
Surge Current Rating:3360 A
Repetitive Peak Forward Blocking Voltage:400 V
Peak On-State Voltage:1.57 V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

VS-ST180S16P1PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:600 mA
Rated Average On-State Current:200 A
Surge Current Rating:5230 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.75@570A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

VS-70TPS16PBF

VS-70TPS16PBF

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1600 V
Maximum Holding Current:200 mA
Rated Average On-State Current:70 A
Surge Current Rating:1400 A
Repetitive Peak Forward Blocking Voltage:1600 V
Peak On-State Voltage:1.4@100A V
Repetitive Peak Off-State Current:1 mA
Maximum Gate Trigger Voltage:1.5 V
Maximum Gate Trigger Current:100 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

TYN825RG

TYN825RG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:50 mA
Rated Average On-State Current:16 A
Surge Current Rating:314 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@50A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:40 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

FODM611

电气特性 Features

  • 高抗干扰,5V,10MBit/秒的逻辑门输出(集电极开路)光电耦合器
  • High Noise Immunity, 5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler
  • High Speed Logic Gate
光电耦合器(光耦) 更新于 2026-09-20 Tag标签:光电耦合器(光耦)

FODM8801B

电气特性 Features

  • DC(直流)检测输入,高温光电晶体管
  • OptoHiT? Series, High-Temperature Phototransistor
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-20 Tag标签:光电耦合器(光耦)

VS-ST1200C20K0P

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:2000 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1650 A
Surge Current Rating:32000 A
Repetitive Peak Forward Blocking Voltage:2000 V
Peak On-State Voltage:1.73@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

TISP9110MDMR-S

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:120 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:9 A
Maximum Gate Trigger Current:5 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

VS-ST1200C18K0

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:1650 A
Surge Current Rating:32000 A
Repetitive Peak Forward Blocking Voltage:1800 V
Peak On-State Voltage:1.73@4000A V
Repetitive Peak Off-State Current:100 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

TISP61060PS

TISP61060PS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:6 A
Repetitive Peak Forward Blocking Voltage:100 V
Peak On-State Voltage:7@30A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Current:15 mA
Operating Temperature:-40 to 85 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

VS-16RIA100

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1000 V
Maximum Holding Current:130 mA
Rated Average On-State Current:16 A
Surge Current Rating:360 A
Repetitive Peak Forward Blocking Voltage:1000 V
Peak On-State Voltage:1.75@50A V
Repetitive Peak Off-State Current:10 mA
Maximum Gate Trigger Voltage:2 V
Maximum Gate Trigger Current:60 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-65 to 125 ℃
Mounting:Stud
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

TISP4350J1BJR-S

TISP4350J1BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:275 V
Maximum Holding Current:20(Min) mA
Surge Current Rating:100 A
Repetitive Peak Forward Blocking Voltage:275 V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)

TISP4300H4BJRS

TISP4300H4BJRS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:230 V
Maximum Holding Current:800 mA
Surge Current Rating:60 A
Repetitive Peak Forward Blocking Voltage:230 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-20 Tag标签:可控硅(晶闸管)