MJB5742T4G

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电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	4 A
Minimum DC Current Gain:	750@2A@3V
Maximum Collector Emitter Saturation Voltage:	2.8@40mA@2A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-12-22

电气特性 Features

Configuration:	Array 7
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Maximum Collector Emitter Saturation Voltage:	1.1@100mA|1.3@200mA|1.6@350mA V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-12-22

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-12-22

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	25 A
Minimum DC Current Gain:	600@5A@3V|500@10A@3V|300@20A@3V
Maximum Collector Emitter Saturation Voltage:	1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-12-22

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	30 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	5000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:	1.5@0.1mA@100mA V
Maximum Collector Base Voltage:	30 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-12-22