更新于 2026-03-07
电气特性 Features
| Configuration: | Single |
| Type: | NPN |
| Peak DC Collector Current: | 8 A |
| Minimum DC Current Gain: | 50@0.5A@5V|200@4A@5V |
| Maximum Collector Emitter Saturation Voltage: | 2@0.2A@4A|3@0.4A@8A V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
MJB5742T4G
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- 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,
电气特性 Features
| Configuration: | Octal |
| Type: | NPN |
| Maximum Collector Emitter Voltage: | 50 V |
| Peak DC Collector Current: | 0.5 A |
| Minimum DC Current Gain: | 1000@350mA@2V |
| Maximum Collector Emitter Saturation Voltage: | 1.6@350mA|1.3@200mA|1.1@100mA V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
更多相似达林顿晶体管产品参数说明表
电气特性 Features
| Configuration: | Single |
| Type: | NPN |
| Maximum Collector Emitter Voltage: | 350 V |
| Peak DC Collector Current: | 4 A |
| Minimum DC Current Gain: | 500@4A@2V|1800@2A@2V |
| Maximum Collector Emitter Saturation Voltage: | 2@20mA@2A V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single Dual Collector |
| Type: | NPN |
| Maximum Collector Emitter Voltage: | 30 V |
| Peak DC Collector Current: | 1 A |
| Minimum DC Current Gain: | 10000@10mA@5V|20000@100mA@5V|5000@1A@5V |
| Maximum Collector Emitter Saturation Voltage: | 1.5@0.1mA@100mA|1.6@1mA@1A V |
| Maximum Collector Base Voltage: | 30 V |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Type: | NPN |
| Maximum Collector Emitter Voltage: | 80 V |
| Peak DC Collector Current: | 8 A |
| Minimum DC Current Gain: | 750@3A@3V |
| Maximum Collector Emitter Saturation Voltage: | 2@12mA@3A|2.5@50mA@5A V |
| Maximum Collector Base Voltage: | 100 V |
| Mounting: | Through Hole |
| Rad Hard: | No |