MJB5742T4G

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电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	60 V
Peak DC Collector Current:	0.8 A
Minimum DC Current Gain:	10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:	1@0.1mA@100mA V
Maximum Collector Base Voltage:	80 V
Operating Temperature:	-65 to 150 ℃
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	60 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	500@1A@4V|1000@4A@4V
Maximum Collector Emitter Saturation Voltage:	2@16mA@4A|3@30mA@6A V
Maximum Collector Base Voltage:	60 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	1200 V
Peak DC Collector Current:	0.1 A
Minimum DC Current Gain:	230@20mA@10V|200@30mA@10V
Maximum Collector Emitter Saturation Voltage:	2@0.5mA@50mA V
Maximum Collector Base Voltage:	2000 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

Configuration:	Octal Common Emitter
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:	1.6@500uA@350mA|1.3@350uA@200mA|1.1@250uA@100mA V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-09-16

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	350 V
Peak DC Collector Current:	15 A
Minimum DC Current Gain:	300@5A@10V
Maximum Collector Emitter Saturation Voltage:	1.8@100mA@8A|1.8@250mA@10A V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-09-16