ULN2002ANE4

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电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	400 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	200@4A@5V|50@500mA@5V
Maximum Collector Emitter Saturation Voltage:	2@0.2A@4A|3@0.4A@8A V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-11-06

电气特性 Features

Configuration:	Single Dual Collector
Type:	PNP
Maximum Collector Emitter Voltage:	60 V
Peak DC Collector Current:	1 A
Minimum DC Current Gain:	1000@150mA@10V|2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:	1.3@0.5mA@500mA V
Maximum Collector Base Voltage:	80 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-11-06

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	70 V
Peak DC Collector Current:	2 A
Minimum DC Current Gain:	1000@1A@2V
Maximum Collector Emitter Saturation Voltage:	1.5@1mA@1A V
Maximum Collector Base Voltage:	70 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-11-06

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	10000@10mA@5V|10000@100mA@5V
Maximum Collector Emitter Saturation Voltage:	1.5@100uA@100mA V
Maximum Collector Base Voltage:	80 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-11-06

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-11-06