ULN2003APWG4

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电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	8 A
Minimum DC Current Gain:	1000@4A@4V|100@8A@4V
Maximum Collector Emitter Saturation Voltage:	2@16mA@4A|4@80mA@8A V
Maximum Collector Base Voltage:	100 V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-06-12

电气特性 Features

Configuration:	Octal
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:	1.6@350mA|1.3@200mA|1.1@100mA V
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-06-12

电气特性 Features

Configuration:	Single
Type:	PNP
Maximum Collector Emitter Voltage:	100 V
Peak DC Collector Current:	10 A
Minimum DC Current Gain:	500@10A@4V|1000@5A@4V
Maximum Collector Emitter Saturation Voltage:	2@10mA@5A|3@40mA@10A V
Maximum Collector Base Voltage:	100 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-06-12

电气特性 Features

Configuration:	Octal Common Emitter
Type:	NPN
Maximum Collector Emitter Voltage:	50 V
Peak DC Collector Current:	0.5 A
Minimum DC Current Gain:	1000@350mA@2V
Maximum Collector Emitter Saturation Voltage:	1.1@250uA@100mA|1.3@350uA@200mA|1.6@500uA@350mA V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-06-12

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-06-12