
电气特性 Features
- 功率晶体管
- Trans GP BJT PNP 50V 3A
| Type: | NPN |
| Pin Count: | 3 |
| Maximum Collector Emitter Voltage: | 160 V |
| Maximum DC Collector Current: | 1.5 A |
| Minimum DC Current Gain: | 200@100mA@5V |
| Maximum Operating Frequency: | 120(Typ) MHz |
| Maximum Collector Emitter Saturation Voltage: | 0.45@50mA@500mA V |
| Maximum Collector Base Voltage: | 180 V |
| Operating Temperature: | -55 to 150 ℃ |
| Maximum Power Dissipation: | 1000 mW |
| Mounting: | Surface Mount |
| Rad Hard: | No |
| Type: | NPN |
| Pin Count: | 3 |
| Maximum Collector Emitter Voltage: | 100 V |
| Maximum DC Collector Current: | 4 A |
| Minimum DC Current Gain: | 200@0.5A@5V |
| Maximum Operating Frequency: | 180(Typ) MHz |
| Maximum Collector Emitter Saturation Voltage: | 0.4@0.2A@2A V |
| Maximum Collector Base Voltage: | 120 V |
| Operating Temperature: | -55 to 150 ℃ |
| Maximum Power Dissipation: | 1000 mW |
| Mounting: | Through Hole |
| Rad Hard: | No |
| Type: | PNP |
| Pin Count: | 3 |
| Maximum Collector Emitter Voltage: | 80 V |
| Maximum DC Collector Current: | 25 A |
| Minimum DC Current Gain: | 35@3A@4V|20@10A@4V|4@25A@4V |
| Maximum Operating Frequency: | 4(Min) MHz |
| Maximum Collector Emitter Saturation Voltage: | 1@1.5A@15A|4@6.25A@25A V |
| Maximum Collector Base Voltage: | 80 V |
| Operating Temperature: | -65 to 200 ℃ |
| Maximum Power Dissipation: | 200000 mW |
| Mounting: | Through Hole |
| Rad Hard: | No |
| Type: | NPN |
| Pin Count: | 6 |
| Maximum Collector Emitter Voltage: | 45 V |
| Maximum DC Collector Current: | 0.1 A |
| Minimum DC Current Gain: | 200@2mA@5V |
| Maximum Operating Frequency: | 100(Min) MHz |
| Maximum Collector Emitter Saturation Voltage: | 0.1@0.5mA@10mA|0.3@5mA@100mA V |
| Maximum Collector Base Voltage: | 50 V |
| Operating Temperature: | -55 to 150 ℃ |
| Maximum Power Dissipation: | 380 mW |
| Mounting: | Surface Mount |
| Rad Hard: | No |