开关元件

TISP7125F3DRS

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:100 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4.3 A
Repetitive Peak Forward Blocking Voltage:100 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-VSKH105/14

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:250 mA
Rated Average On-State Current:105 A
Surge Current Rating:2094 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.8 V
Repetitive Peak Off-State Current:20 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 130 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-VSKH41/14

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1400 V
Maximum Holding Current:200 mA
Rated Average On-State Current:45 A
Surge Current Rating:985 A
Repetitive Peak Forward Blocking Voltage:1400 V
Peak On-State Voltage:1.81 V
Repetitive Peak Off-State Current:15 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP6NTP2CDR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:170 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:7 A
Repetitive Peak Forward Blocking Voltage:170 V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:6 mA
Operating Temperature:-40 to 85 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST303C12LFH0

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:515 A
Surge Current Rating:8320 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:2.16@1255A V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-VSKH142/12PBF

电气特性 Features

Type:SCR Module
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:200 mA
Rated Average On-State Current:140 A
Surge Current Rating:4712 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.55 V
Repetitive Peak Off-State Current:50 mA
Maximum Gate Trigger Voltage:2.5 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:10 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

FODM121

电气特性 Features

  • DC(直流)检测输入,光电晶体管输出的光电耦合器
  • 4-pin Full Pitch MFP Phototransistor Output Optocoupler
  • Phototransistor Output - DC Sensing Input
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)

VS-ST183S08PFL1P

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:195 A
Surge Current Rating:5130 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.8@600A V
Repetitive Peak Off-State Current:40 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:200 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TMMDB3

电气特性 Features

Type:DIAC
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-40 to 125 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP7240F3DR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:180 V
Maximum Holding Current:150(Min) mA
Surge Current Rating:4.3 A
Repetitive Peak Forward Blocking Voltage:180 V
Peak On-State Voltage:5@5A V
Repetitive Peak Off-State Current:0.01 mA
Operating Temperature:-65 to 150 ℃
Mounting:Surface Mount
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TISP4300M3BJR-S

TISP4300M3BJR-S

电气特性 Features

Type:TSPD
Repetitive Peak Reverse Voltage:230 V
Maximum Holding Current:350 mA
Surge Current Rating:32 A
Repetitive Peak Forward Blocking Voltage:230 V
Peak On-State Voltage:3@5A V
Repetitive Peak Off-State Current:0.005 mA
Operating Temperature:-40 to 150 ℃
Mounting:Surface Mount
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST230C12C0L

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:1200 V
Maximum Holding Current:600 mA
Rated Average On-State Current:410 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:1200 V
Peak On-State Voltage:1.69@880A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Screw
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

VS-ST230S08P0V

电气特性 Features

Type:PCT
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:600 mA
Rated Average On-State Current:230 A
Surge Current Rating:5970 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.55@720A V
Repetitive Peak Off-State Current:30 mA
Maximum Gate Trigger Voltage:3 V
Maximum Gate Trigger Current:150 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Stud
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

TYN812RG

TYN812RG

电气特性 Features

Type:SCR
Repetitive Peak Reverse Voltage:800 V
Maximum Holding Current:30 mA
Rated Average On-State Current:8 A
Surge Current Rating:145 A
Repetitive Peak Forward Blocking Voltage:800 V
Peak On-State Voltage:1.6@24A V
Repetitive Peak Off-State Current:0.005 mA
Maximum Gate Trigger Voltage:1.3 V
Maximum Gate Trigger Current:15 mA
Maximum Gate Peak Inverse Voltage:5 V
Operating Temperature:-40 to 125 ℃
Mounting:Through Hole
Rad Hard:No
可控硅(晶闸管) 更新于 2026-09-18 Tag标签:可控硅(晶闸管)

FODM8061

电气特性 Features

  • 高抗干扰,3.3V/5V,10MBit/秒的逻辑门输出(集电极开路)光电耦合器
  • High Noise Immunity, 3.3V/5V, 10Mbit/sec Logic Gate Output (Open Collector) Optocoupler
  • Low Voltage, High Performance
光电耦合器(光耦) 更新于 2026-09-18 Tag标签:光电耦合器(光耦)