IGD01N120H2BUMA1

IGD01N120H2BUMA1

电气特性 Features

  • 绝缘栅双极型晶体管单管,Trans IGBT Chip N-CH 1.2KV 3.2A

IGB50N60TATMA1

IGB50N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:100 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB30N60TATMA1

IGB30N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB30N60H3ATMA1

IGB30N60H3ATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:60 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB20N60H3ATMA1

IGB20N60H3ATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:40 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB15N60TATMA1

IGB15N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:30 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB10N60TATMA1

IGB10N60TATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:20 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB03N120H2ATMA1

IGB03N120H2ATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:9.6 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGB01N120H2ATMA1

IGB01N120H2ATMA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3.2 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Surface Mount
Rad Hard:No

IGA30N60H3XKSA1

IGA30N60H3XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:18 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

IGA03N120H2XKSA1

IGA03N120H2XKSA1

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:3 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

HGTP10N120BN

HGTP10N120BN

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:35 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

HGTG18N120BND

HGTG18N120BND

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:54 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

HGTG18N120BN

HGTG18N120BN

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:1200 V
Maximum Continuous Collector Current:54 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No

HGTG12N60C3D

HGTG12N60C3D

电气特性 Features

Configuration:Single
Channel Type:N
Maximum Collector Emitter Voltage:600 V
Maximum Continuous Collector Current:24 A
Maximum Gate Emitter Voltage:±20 V
Mounting:Through Hole
Rad Hard:No