2N6036G

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电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	4 A
Minimum DC Current Gain:	750@1.5A@3V
Maximum Collector Emitter Saturation Voltage:	2.5@30mA@1.5A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-06-10

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-06-10

电气特性 Features

Configuration:	Single Dual Collector
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	1 A
Minimum DC Current Gain:	2000@500mA@10V
Maximum Collector Emitter Saturation Voltage:	1.3@0.5mA@500mA V
Maximum Collector Base Voltage:	90 V
Operating Temperature:	-65 to 150 ℃
Mounting:	Surface Mount
Rad Hard:	No

更新于 2025-06-10

电气特性 Features

• 类型: 开关二极管,Pd = 350mW,Io = 150mA,Vr = 75V,Vf = 1.25V,Ir = 1uA,Trr = 4ns,内部电路图:,

更多相似达林顿晶体管产品参数说明表

更新于 2025-06-10

电气特性 Features

Configuration:	Single
Type:	NPN
Maximum Collector Emitter Voltage:	80 V
Peak DC Collector Current:	25 A
Minimum DC Current Gain:	600@5A@3V|500@10A@3V|300@20A@3V
Maximum Collector Emitter Saturation Voltage:	1.2@20mA@5A|1.75@40mA@10A|3.5@80mA@20A V
Maximum Collector Base Voltage:	80 V
Mounting:	Through Hole
Rad Hard:	No

更新于 2025-06-10