更新于 2025-06-12电气特性 Features
- P沟道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 290.0mΩ
- Qg(Typ): 44.0nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 110W
- Id@TC 25C: -13A
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