更新于 2025-09-16电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 135.0mΩ
- Qg(Typ): 2.9nC
- Rth(JC): 100 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 105.0mΩ,RDS(on) Max@4.5V: 170.0mΩ,Qg(Typ): 31.0nC,Rth(JC): 3.84K/W,Power Dissipation@TC 25C: 33W,Id@TC 25C: -14A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 31.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 13K/W,Power Dissipation@TC 25C: 9.6W,Id@TC 25C: -15A
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 40.0m?,RDS(on) Max@4.5V: 66.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 62.5 (JA)K/W