更新于 2025-11-06电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 270.0mΩ
- Qg(Typ): 5.4nC
- Rth(JC): 100 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480mΩ,Qg(Typ): 18nC,Rth(JC): 3.2K/W,Power Dissipation@TC 25C: 39W,Id@TC 25C: -4.1A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@10V: 60.0mΩ,RDS(on) Max@4.5V: 100.0mΩ,Qg(Typ): 25.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: -32.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 62.5 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 11.9mΩ,RDS(on) Max@4.5V: 19.7mΩ,Qg(Typ): 18.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.3K/W,Power Dissipation@TC 25C: 120W,Id@TC 25C: -21A