更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 105mΩ
- RDS(on) Max@4.5V: 170mΩ
- Qg(Typ): 31nC
- Rth(JC): 1.9K/W
- Power Dissipation@TC 25C: 79W
- Id@TC 25C: -14A
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 70.0m?,RDS(on) Max@4.5V: 130.0mΩ,Qg(Typ): 27.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 60.0mΩ,Qg(Typ): 42.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: -31A
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 580.0mΩ,Qg(Typ): 44.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: 13A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 59.0m?,RDS(on) Max@4.5V: 110.0mΩ,Qg(Typ): 4.7nC,Rth(JC): 50 (JA)K/W
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |