更新于 2025-06-11
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 20.0mΩ
- RDS(on) Max@4.5V: 35.0mΩ
- Qg(Typ): 61.0nC
- Rth(JC): 50 (JA)K/W
IRF7416
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 14.6mΩ,Qg(Typ): 16.0nC,Rth(JC): 6.0K/W,Id@TC 25C: -24A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 70 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |