更新于 2026-03-08电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 600.0mΩ
- Qg(Typ): 2.4nC
- Rth(JC): 230 (JA)K/W
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