更新于 2025-07-26
电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 62.0m?
- RDS(on) Max@4.5V: 98.0mΩ
- Qg(Typ): 23.0nC
- Rth(JC): 62.5 (JA)K/W
IRF7321D2
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 4.6m?,RDS(on) Max@4.5V: 7.1mΩ,Qg(Typ): 58.0nC,Rth(JC): 1.6K/W,Id@TC 25C: -40A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 200.0mΩ,Qg(Typ): 5.8nC,Rth(JC): 75 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0m?,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.2K/W,Power Dissipation@TC 25C: 39W,Id@TC 25C: -6.5A
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 200.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 79W,Id@TC 25C: -14A