更新于 2026-09-03电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 64.0mΩ
- RDS(on) Max@4.5V: 103.0mΩ
- Qg(Typ): 4.8nC
- Rth(JC): 100 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 150.0mΩ,Qg(Typ): 21.0nC,Rth(JC): 0.61K/W,Power Dissipation@TC 25C: 250W,Id@TC 25C: -27A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 19.4mΩ,RDS(on) Max@4.5V: 32.5mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@10V: 60.0mΩ,RDS(on) Max@4.5V: 100.0mΩ,Qg(Typ): 25.0nC,Rth(JC): 50 (JA)K/W