电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 26.0mΩ
- RDS(on) Max@4.5V: 40.0mΩ
- Qg(Typ): 46.0nC
- Rth(JC): 70 (JA)K/W
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电气特性 Features
- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 50.0mΩ,Qg(Typ): 10.0nC,Rth(JC): 75 (JA)K/W
电气特性 Features
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 100.0mΩ,Qg(Typ): 23.3nC,Rth(JC): 2.7K/W,Power Dissipation@TC 25C: 56W,Id@TC 25C: -17A
电气特性 Features
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 11.9mΩ,Qg(Typ): 18.0nC,Rth(JC): 50 (JA)K/W
电气特性 Features
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 17.5m?,RDS(on) Max@4.5V: 28.1mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W