更新于 2025-09-16电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 25V
- RDS(on) Max@10V: 14.6mΩ
- Qg(Typ): 16.0nC
- Rth(JC): 6.0K/W
- Id@TC 25C: -24A
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