IRF7321D2

电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 62.0m?
- RDS(on) Max@4.5V: 98.0mΩ
- Qg(Typ): 23.0nC
- Rth(JC): 62.5 (JA)K/W
IRLML2246TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 135.0mΩ
- Qg(Typ): 2.9nC
- Rth(JC): 100 (JA)K/W
IRLML6401TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -12V
- Vgs: 8V
- RDS(on) Max@4.5V: 50.0mΩ
- Qg(Typ): 10.0nC
- Rth(JC): 75 (JA)K/W
IRF7404

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 40.0mΩ
- Qg(Typ): 33.3nC
- Rth(JC): 50 (JA)K/W
IRF7404PBF-1

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 40.0mΩ
- Qg(Typ): 32.7nC
- Rth(JC): 50 (JA)K/W
IRLML6302TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 600.0mΩ
- Qg(Typ): 2.4nC
- Rth(JC): 230 (JA)K/W
IRF7241

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -40V
- Vgs: 20V
- RDS(on) Max@10V: 41.0mΩ
- RDS(on) Max@4.5V: 70.0mΩ
- Qg(Typ): 53.0nC
- Rth(JC): 50 (JA)K/W
IRF7205

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0m?
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27.0nC
- Rth(JC): 50 (JA)K/W
IRF7726
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 26.0mΩ
- RDS(on) Max@4.5V: 40.0mΩ
- Qg(Typ): 46.0nC
- Rth(JC): 70 (JA)K/W
PMBFJ174,215

电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 135 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
IRLML5203TRPBF-1
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 98.0mΩ
- RDS(on) Max@4.5V: 165.0mΩ
- Qg(Typ): 9.5nC
- Rth(JC): 100 (JA)K/W
IRF6216PBF-1

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 240.0mΩ
- Qg(Typ): 33nC
- Rth(JC): 50 (JA)K/W
IRF7420PBF-1

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -12V
- Vgs: 8V
- RDS(on) Max@4.5V: 14.0mΩ
- Qg(Typ): 38nC
- Rth(JC): 50 (JA)K/W
IRF7420

电气特性 Features
- P沟道功率MOS管
- Vbrdss: -12V
- Vgs: 8V
- RDS(on) Max@4.5V: 14.0mΩ
- Qg(Typ): 38.0nC
- Rth(JC): 50 (JA)K/W
IRFU5305
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 65mΩ
- Qg(Typ): 42nC
- Rth(JC): 1.4K/W
- Power Dissipation@TC 25C: 89W
- Id@TC 25C: -18A

更新于 2026-04-20