更新于 2025-09-17电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 40.0m?
- RDS(on) Max@4.5V: 66.0mΩ
- Qg(Typ): 12.0nC
- Rth(JC): 62.5 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 14.6mΩ,RDS(on) Max@4.5V: 22.5mΩ,Qg(Typ): 32.0nC,Rth(JC): 3.8K/W,Power Dissipation@TC 25C: 33W,Id@TC 25C: -38A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 32.7nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 580mΩ,Qg(Typ): 44nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: -9A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W