更新于 2025-07-29
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 19.4mΩ
- RDS(on) Max@4.5V: 32.5mΩ
- Qg(Typ): 14.0nC
- Rth(JC): 50 (JA)K/W
IRF9333
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