更新于 2025-06-10
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 40V
- Vgs: 12V
- RDS(on) Max@10V: 15.5mΩ
- Id: 9.0A
IRF7468
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- N沟道功率MOS管,Vbrdss: 25V,Vgs: 16V,RDS(on) Max@10V: 3.7mΩ,Id: 74A
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 3.05mΩ,Id: 197A
- N沟道功率MOS管,Vbrdss: 80V,Vgs: 20V,RDS(on) Max@10V: 13.4mΩ
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 16V,RDS(on) Max@10V: 480.0mΩ
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |