更新于 2025-06-11
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 59.0m?
- RDS(on) Max@4.5V: 110.0mΩ
- Qg(Typ): 4.7nC
- Rth(JC): 50 (JA)K/W
IRF9335
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 25V,RDS(on) Max@10V: 19.4mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -23A
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 110.0mΩ,Qg(Typ): 21.3nC,Rth(JC): 2.2K/W,Power Dissipation@TC 25C: 57W,Id@TC 25C: -18A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 37.0m?,RDS(on) Max@4.5V: 65.0mΩ,Qg(Typ): 6.9nC,Rth(JC): 13K/W,Id@TC 25C: -13A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Drain Source Voltage: | 30 V |
| Maximum Continuous Drain Current: | 135 mA |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | 30 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |