更新于 2025-06-11
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 59.0m?
- RDS(on) Max@4.5V: 110.0mΩ
- Qg(Typ): 4.7nC
- Rth(JC): 50 (JA)K/W
IRF9335
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- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.2K/W,Power Dissipation@TC 25C: 39W,Id@TC 25C: -6.5A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 4.6m?,RDS(on) Max@4.5V: 6.8mΩ,Qg(Typ): 58.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 100.0mΩ,Qg(Typ): 23.3nC,Rth(JC): 2.2K/W,Power Dissipation@TC 25C: 68W,Id@TC 25C: -19A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |