更新于 2026-04-20电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 25V
- RDS(on) Max@10V: 14.6mΩ
- RDS(on) Max@4.5V: 22.5mΩ
- Qg(Typ): 32.0nC
- Rth(JC): 3.8K/W
- Power Dissipation@TC 25C: 33W
- Id@TC 25C: -38A
相关文章
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 2400.0mΩ,Qg(Typ): 6.0nC,Rth(JC): 20K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 40.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 100.0mΩ,Qg(Typ): 23.3nC,Rth(JC): 2.2K/W,Power Dissipation@TC 25C: 68W,Id@TC 25C: 19A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 8.2mΩ,Qg(Typ): 87.0nC,Rth(JC): 50 (JA)K/W