更新于 2025-06-13电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- Id@TC 25C: -5.3A
相关文章
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: 13A
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 175.0mΩ,Qg(Typ): 12.7nC,Rth(JC): 3.3K/W,Power Dissipation@TC 25C: 38W,Id@TC 25C: 11A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 90.0mΩ,RDS(on) Max@4.5V: 150.0mΩ,Qg(Typ): 20.0nC,Rth(JC): 70 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 13.5m?,RDS(on) Max@4.5V: 22.0mΩ,Qg(Typ): 75.0nC,Rth(JC): 50 (JA)K/W
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |