更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- Id@TC 25C: -5.3A
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 200.0mΩ,RDS(on) Max@4.5V: 400.0mΩ,Qg(Typ): 7.2nC,Rth(JC): 75 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 140W,Id@TC 25C: -23A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 7.2m?,RDS(on) Max@4.5V: 11.2mΩ,Qg(Typ): 34.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -74A
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,Id@TC 25C: -5.3A