更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 117.0mΩ
- Qg(Typ): 64.7nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 140W
- Id@TC 25C: -23A
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0m?,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 37.0m?,RDS(on) Max@4.5V: 65.0mΩ,Qg(Typ): 6.9nC,Rth(JC): 13K/W,Id@TC 25C: -13A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 200.0mΩ,RDS(on) Max@4.5V: 400.0mΩ,Qg(Typ): 7.2nC,Rth(JC): 75 (JA)K/W
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 20V,RDS(on) Max@4.5V: 86.0mΩ,Qg(Typ): 8.3nC,Rth(JC): 62.5 (JA)K/W,Power Dissipation@TC 25C: 2.0W,Id@TC 25C: -4.0A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |