更新于 2025-06-10电气特性 Features
- P沟道功率MOS管
- Vbrdss: -100V
- Vgs: 20V
- RDS(on) Max@10V: 117.0mΩ
- Qg(Typ): 64.7nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 140W
- Id@TC 25C: -23A
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,RDS(on) Max@4.5V: 35.0mΩ,Qg(Typ): 61.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 19.4mΩ,RDS(on) Max@4.5V: 32.5mΩ,Qg(Typ): 14.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 205mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 66W,Id@TC 25C: -8.2A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 54.0mΩ,Qg(Typ): 6.9nC,Rth(JC): 100 (JA)K/W
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |