更新于 2025-06-11
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 20V
- RDS(on) Max@10V: 4.4mΩ
IRF3717PBF-1
相关文章
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 8.4mΩ,Id: 79A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 65mΩ,Id: 11A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 6.3mΩ,Id: 87A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 3.2mΩ,Id: 150A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | -25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |