更新于 2025-06-11
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 20V
- RDS(on) Max@10V: 4.4mΩ
IRF3717PBF-1
相关文章
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 2.8mΩ,Id: 210A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 4.7mΩ,Id: 175A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 6.0mΩ
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 50 V |
| Maximum Continuous Drain Current: | 100 mA |
| Maximum Gate Source Voltage: | ±20 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 15 V |
| Maximum Continuous Drain Current: | 50 mA |
| Maximum Drain Gate Voltage: | -15 V |
| Operating Temperature: | -55 to 125 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |