更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 8.1mΩ
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- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 4.5mΩ,Id: 170A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 1.95mΩ,Id: 260A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 20V,RDS(on) Max@10V: 75.0mΩ,Id: 4.0A
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5.5 V |
| Maximum Continuous Drain Current: | 305 mA |
| Maximum Gate Source Voltage: | -5 V |
| Maximum Drain Gate Voltage: | -5 V |
| Operating Temperature: | -65 to 160 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
| Configuration: | Dual Common Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 65 V |
| Maximum Gate Source Voltage: | 11 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Screw |
| Rad Hard: | No |