更新于 2025-09-16电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 175mΩ
- Qg(Typ): 12.7nC
- Rth(JC): 3.3K/W
- Power Dissipation@TC 25C: 38W
- Id@TC 25C: -8A
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