更新于 2026-04-20
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -150V
- Vgs: 20V
- RDS(on) Max@10V: 240.0mΩ
- Qg(Typ): 33nC
- Rth(JC): 50 (JA)K/W
IRF6216PBF-1
相关文章
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 4.6m?,RDS(on) Max@4.5V: 6.8mΩ,Qg(Typ): 58.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 100.0mΩ,Qg(Typ): 23.3nC,Rth(JC): 2.2K/W,Power Dissipation@TC 25C: 68W,Id@TC 25C: 19A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 13.5m?,RDS(on) Max@4.5V: 22.0mΩ,Qg(Typ): 75.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 65.0mΩ,Qg(Typ): 8.0nC,Rth(JC): 75 (JA)K/W
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: -32.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 62.5 (JA)K/W