更新于 2025-06-10电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 2.9mΩ
- RDS(on) Max@4.5V: 4.8m?
- Qg(Typ): 130.0nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 113W
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