更新于 2025-09-16电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 2.9mΩ
- RDS(on) Max@4.5V: 4.8m?
- Qg(Typ): 130.0nC
- Rth(JC): 1.1K/W
- Power Dissipation@TC 25C: 113W
相关文章
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 117.0mΩ,Qg(Typ): 64.7nC,Rth(JC): 1.1K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -23A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 54.0mΩ,Qg(Typ): 6.9nC,Rth(JC): 100 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,Id@TC 25C: -5.3A
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480.0mΩ,Qg(Typ): 18.0nC,Rth(JC): 3.1K/W,Power Dissipation@TC 25C: 48W,Id@TC 25C: -6.8A
- P沟道功率MOS管,Vbrdss: -12V,Vgs: 8V,RDS(on) Max@4.5V: 14.0mΩ,Qg(Typ): 38nC,Rth(JC): 50 (JA)K/W