更新于 2025-06-11
电气特性 Features
- P沟道功率MOS管
- Vbrdss: -30V
- Vgs: 20V
- RDS(on) Max@10V: 70.0mΩ
- RDS(on) Max@4.5V: 130.0mΩ
- Qg(Typ): 27nC
- Rth(JC): 50 (JA)K/W
IRF7205PBF-1
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- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 240.0mΩ,Qg(Typ): 33.0nC,Rth(JC): 20K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 60.0m?Ω,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 200W,Id@TC 25C: -40A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@10V: 60.0mΩ,RDS(on) Max@4.5V: 100.0mΩ,Qg(Typ): 25.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 20.0mΩ,Qg(Typ): 120.0nC,Rth(JC): 0.75K/W,Power Dissipation@TC 25C: 170W,Id@TC 25C: -74A
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |