更新于 2025-06-12
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 20V
- Vgs: 12V
- RDS(on) Max@10V: 6.5mΩ
IRF7456PBF-1
相关文章
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 14mΩ,Id: 43A
- N沟道功率MOS管,Vbrdss: 60V,Vgs: 20V,RDS(on) Max@10V: 12.0mΩ,Id: 57A
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 30V,RDS(on) Max@10V: 9.0mΩ,Id: 141A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 6.5mΩ,Id: 86A
电气特性 Features
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Gate Source Voltage: | 25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |