更新于 2025-06-12
电气特性 Features
- 集成肖特基二极管的P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 105.0mΩ
- RDS(on) Max@4.5V: 170.0mΩ
- Qg(Typ): 26.0nC
- Rth(JC): 62.5 (JA)K/W
IRF7342D2
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- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 200.0mΩ,Qg(Typ): 38.7nC,Rth(JC): 1.9K/W,Power Dissipation@TC 25C: 3.8W,Id@TC 25C: -14A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 98.0mΩ,RDS(on) Max@4.5V: 165.0mΩ,Qg(Typ): 9.5nC,Rth(JC): 100 (JA)K/W
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 4.6m?,RDS(on) Max@4.5V: 6.8mΩ,Qg(Typ): 58.0nC,Rth(JC): 50 (JA)K/W
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电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |