更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -55V
- Vgs: 20V
- RDS(on) Max@10V: 175.0mΩ
- Qg(Typ): 12.7nC
- Rth(JC): 3.3K/W
- Power Dissipation@TC 25C: 45W
- Id@TC 25C: -12A
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- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 31.0mΩ,Qg(Typ): 12.0nC,Rth(JC): 13K/W,Power Dissipation@TC 25C: 9.6W,Id@TC 25C: -15A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 45.0mΩ,RDS(on) Max@4.5V: 70.0mΩ,Qg(Typ): 39.3nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -100V,Vgs: 20V,RDS(on) Max@10V: 480mΩ,Qg(Typ): 18nC,Rth(JC): 3.2K/W,Power Dissipation@TC 25C: 39W,Id@TC 25C: -4.1A
- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 13.5mΩ,RDS(on) Max@4.5V: 22.0mΩ,Qg(Typ): 75nC,Rth(JC): 50 (JA)K/W
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |