更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 60V
- Vgs: 20V
- RDS(on) Max@10V: 2.4mΩ
- Id: 195A
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- N沟道功率MOS管,Vbrdss: 80V,Vgs: 16V,RDS(on) Max@10V: 28.0mΩ,Id: 39A
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 7.0mΩ,Id: 105A
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 12.6mΩ,Id: 80A
电气特性 Features
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5 V |
| Maximum Continuous Drain Current: | 120 mA |
| Maximum Gate Source Voltage: | 1 V |
| Maximum Drain Gate Voltage: | 5 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | -40 V |
| Operating Temperature: | -55 to 175 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |