更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 235.0mΩ
- Id: 14A
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- N沟道功率MOS管,Vbrdss: 150V,Vgs: 20V,RDS(on) Max@10V: 43.0mΩ
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 8.4mΩ,Id: 76A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 16V,RDS(on) Max@10V: 7.0mΩ,Id: 100A
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5.5 V |
| Maximum Continuous Drain Current: | 305 mA |
| Maximum Gate Source Voltage: | -5 V |
| Maximum Drain Gate Voltage: | -5 V |
| Operating Temperature: | -65 to 160 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |