更新于 2025-06-12电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 235.0mΩ
- Id: 14A
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- N沟道功率MOS管,Vbrdss: 40V,Vgs: 16V,RDS(on) Max@10V: 2.4mΩ,Id: 100A
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 26.0mΩ,Id: 42A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 30V,RDS(on) Max@10V: 25.0mΩ,Id: 65A
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Continuous Drain Current: | 10 mA |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | -25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |