更新于 2025-06-11电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 30V
- RDS(on) Max@10V: 235mΩ
- Id: 9.5A
相关文章
- N沟道功率MOS管,Vbrdss: 75V,Vgs: 20V,RDS(on) Max@10V: 4.5mΩ,Id: 170A
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 4.3mΩ,Id: 100A
- N沟道功率MOS管,Vbrdss: 20V,Vgs: 20V,RDS(on) Max@10V: 7.0mΩ
- N沟道功率MOS管,Vbrdss: 100V,Vgs: 30V,RDS(on) Max@10V: 25.0mΩ,Id: 59A
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 40 V |
| Maximum Gate Source Voltage: | -40 V |
| Maximum Drain Gate Voltage: | 40 V |
| Operating Temperature: | -65 to 200 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |