更新于 2025-06-11电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 7.8mΩ
- Id: 47A
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- N沟道功率MOS管,Vbrdss: 40V,Vgs: 12V,RDS(on) Max@10V: 15.5mΩ,Id: 9.0A
- N沟道功率MOS管,Vbrdss: 55V,Vgs: 16V,RDS(on) Max@10V: 8.0mΩ,Id: 89A
- N沟道功率MOS管,Vbrdss: 200V,Vgs: 20V,RDS(on) Max@10V: 75.0mΩ,Id: 30A
- N沟道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 1.35mΩ,Id: 100A
电气特性 Features
| Configuration: | Single Dual Source |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 5.5 V |
| Maximum Continuous Drain Current: | 305 mA |
| Maximum Gate Source Voltage: | -5 V |
| Maximum Drain Gate Voltage: | -5 V |
| Operating Temperature: | -65 to 160 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |