更新于 2025-06-11
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 30V
- Vgs: 20V
- RDS(on) Max@10V: 9.1mΩ
IRF7821PBF-1
相关文章
- N沟道功率MOS管,Vbrdss: 40V,Vgs: 20V,RDS(on) Max@10V: 1.3mΩ,Id: 409A
- N沟道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 2.2mΩ,Id: 105A
- N沟道功率MOS管,Vbrdss: 30V,Vgs: 20V,RDS(on) Max@10V: 6.8mΩ
- N沟道功率MOS管,Vbrdss: 150V,Vgs: 30V,RDS(on) Max@10V: 45.0mΩ,Id: 41A
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Drain Source Voltage: | 25 V |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | -25 V |
| Operating Temperature: | -65 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |