更新于 2025-06-11
电气特性 Features
- N沟道功率MOS管
- Vbrdss: 200V
- Vgs: 20V
- RDS(on) Max@10V: 78.0mΩ
IRF7820
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电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Through Hole |
| Rad Hard: | No |