更新于 2025-06-11电气特性 Features
- P沟道功率MOS管
- Vbrdss: -20V
- Vgs: 12V
- RDS(on) Max@4.5V: 200.0mΩ
- Qg(Typ): 5.8nC
- Rth(JC): 75 (JA)K/W
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- P沟道功率MOS管,Vbrdss: -30V,Vgs: 20V,RDS(on) Max@10V: 11.9mΩ,RDS(on) Max@4.5V: 19.7mΩ,Qg(Typ): 18.0nC,Rth(JC): 50 (JA)K/W
- P沟道功率MOS管,Vbrdss: -55V,Vgs: 20V,RDS(on) Max@10V: 175.0mΩ,Qg(Typ): 12.7nC,Rth(JC): 3.3K/W,Power Dissipation@TC 25C: 38W,Id@TC 25C: 11A
- P沟道功率MOS管,Vbrdss: -150V,Vgs: 20V,RDS(on) Max@10V: 290.0mΩ,Qg(Typ): 44.0nC,Rth(JC): 1.4K/W,Power Dissipation@TC 25C: 110W,Id@TC 25C: -13A
- P沟道功率MOS管,Vbrdss: -20V,Vgs: 12V,RDS(on) Max@4.5V: 40.0mΩ,Qg(Typ): 33.3nC,Rth(JC): 50 (JA)K/W
电气特性 Features
电气特性 Features
电气特性 Features
| Configuration: | Single |
| Channel Type: | P |
| Maximum Gate Source Voltage: | 30 V |
| Maximum Drain Gate Voltage: | -30 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |