更新于 2025-06-11电气特性 Features
- N沟道功率MOS管
- Vbrdss: 150V
- Vgs: 30V
- RDS(on) Max@10V: 45.0mΩ
- Id: 41A
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- N沟道功率MOS管,Vbrdss: 100V,Vgs: 20V,RDS(on) Max@10V: 18.0mΩ,Id: 56A
- N沟道功率MOS管,Vbrdss: 25V,Vgs: 20V,RDS(on) Max@10V: 2.7mΩ
- N沟道功率MOS管,Vbrdss: 24V,Vgs: 20V,RDS(on) Max@10V: 1.5mΩ,Id: 353A
电气特性 Features
| Configuration: | Single |
| Channel Type: | N |
| Maximum Gate Source Voltage: | -25 V |
| Maximum Drain Gate Voltage: | 25 V |
| Operating Temperature: | -55 to 150 ℃ |
| Mounting: | Surface Mount |
| Rad Hard: | No |